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PD - 91841A
IRLBA3803/P
q q q q q
Logic-Level Gate Drive Advanced Process Technology 175C Operating Temperature Fast Switching Fully Avalanche Rated
G
HEXFET(R) Power MOSFET
D
VDSS = 30V RDS(on) = 0.005 ID = 179A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101.
S
Super_ 220
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Recommended clip force
Max.
179 126 720 270 1.8 16 610 71 27 5.0 -55 to + 175 300 (1.6mm from case ) 20
Units
A W W/C V mJ A mJ V/ns C N
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.5 ---
Max.
0.55 --- 58
Units
C/W
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1
1/29/99
IRLBA3803/P
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 --- --- --- 1.0 55 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- --- 14 230 29 35 2.0 5.0 5000 1800 880 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.005 VGS = 10V, ID = 71A 0.009 VGS = 4.5V, ID = 59A V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 71A 25 VDS = 30V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 140 ID = 71A 41 nC VDS = 24V 78 VGS = 4.5V, See Fig. 6 and 13 --- VDD = 15V --- ID = 71A --- RG = 1.3 --- RD = 0.20, See Fig. 10 D Between lead, --- nH 6mm (0.25in.) G from package --- S and center of die contact --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD trr Q rr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 179 showing the A G integral reverse --- --- 720 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 71A, VGS = 0V --- 120 180 ns TJ = 25C, IF = 71A --- 450 680 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25C, L = 180H RG = 25, IAS = 71A. (See Figure 12)
Pulse width 300s; duty cycle 2%. Uses IRL3803 data and test conditions. Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4
ISD 71A, di/dt 130A/s, VDD V(BR)DSS,
TJ 175C
2
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IRLBA3803/P
1000
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
1000
I D , Drain-to-Source Current (A)
100
I D , Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 2.7V TOP
100
2.7V
20s PULSE WIDTH TJ = 175 C
1 10 100
2.7V
10 0.1 1
20s PULSE WIDTH TJ = 25 C
10 100
10 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 175 C
R D S (on ) , D rain-to-S ource O n R esistance (N orm alized)
I D = 1 20 A
1.5
100
1.0
0.5
10 2.0
V DS = 25V 20s PULSE WIDTH 4.0 6.0 8.0 10.0
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLBA3803/P
10000
8000
V G S , G ate-to-S ource V oltage (V )
V GS C iss C C iss C rs s o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
15
I D = 71 A V D S = 24 V V D S = 15 V
12
C , Capacitance (pF)
6000
C oss
9
4000
6
C rss
2000
3
0 1 10 100
A
0 0 40 80
FO R TE S T C IRC UIT S E E FIG U R E 1 3
120 160
A
200
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD , Reverse Drain Current (A)
100
I D , Drain Current (A)
TJ = 175 C
1000
10us
TJ = 25 C
10
100us
100 1ms
1 0.4
V GS = 0 V
0.8 1.2 1.6 2.0 2.4 10 1
TC = 25 C TJ = 175 C Single Pulse
10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLBA3803/P
200
LIMITED BY PACKAGE
160
V DS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
V DD -
120
4.5V
Pulse Width 1 s Duty Factor 0.1 %
80
Fig 10a. Switching Time Test Circuit
40
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRLBA3803/P
1500
E A S , S ingle P ulse A valanche E nergy (m J)
TO P
1200
1 5V
B O TTO M
ID 29 A 5 0A 71 A
VDS
L
D R IV E R
900
RG
20V tp
D .U .T
IA S
+ V - DD
A
600
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
300
0
V D D = 15 V
25 50 75 100 125 150
A
175
V (B R )D SS tp
S tarting T J , J unc tion T em perature (C )
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5 V
VG
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRLBA3803/P
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ V DD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRLBA3803/P
Super_220 Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 1/99
8
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